IXGH30N60C2D1 igbt equivalent, hiperfast igbt.
z z z z
1.13/10Nm/lb.in. 6 4
Very high frequency IGBT Square RBSOA High current handling capability MOS Gate turn-on - drive simplicity
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Characteristic Values (.
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VGE(th) ICES IGES VCE(sat)
IC
= 250 µA, VCE = VGE VCE = VCES VGE = 0 V VCE = 0 V, VGE = ±20 V IC = 24 A, VGE = .
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