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IXYS

IXGC16N60C2D1 Datasheet Preview

IXGC16N60C2D1 Datasheet

HiPerFAST IGBT C2-Class High Speed IGBT in ISOPLUS220 Case

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HiPerFASTTM IGBT
IXGC 16N60C2
C2-Class High Speed IXGC 16N60C2D1
IGBT in ISOPLUS220TM Case
Electrically Isolated Back Surface
Preliminary Data Sheet
VCES
IC25
VCE(sat)
tfi(typ)
www.DataSheet4U.com
= 600 V
= 20 A
= 3.0 V
= 35 ns
Symbol
VCES
VCGR
VGES
VGEM
IC25
IC110
ID110
ICM
SSOA
(RBSOA)
PC
TJ
TJM
Tstg
FC
VISOL
Weight
Symbol
VGE(th)
ICES
IGES
VCE(sat)
Test Conditions
D1
Maximum Ratings
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGE = 1 M
Continuous
Transient
600
600
±20
±30
TC = 25°C
TC = 110°C
TC = 110°C (IXGC16N60C2D1 diode)
TC = 25°C, 1 ms
VGE = 15 V, TJ = 125°C, RG = 22
Clamped inductive load
TC = 25°C
20
8
10
100
ICM = 32
@0.8 VCES
63
-55 ... +150
150
-55 ... +150
Mounting Force
11..65/2.5..15
Isolation Voltage; 50/60Hz; t = 1minute; RMS
2500
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
300
2
V
V
V
V
A
A
A
A
A
W
°C
°C
°C
N/lb.
V
°C
g
Test Conditions
IC = 250 µA, VCE = VGE
VCE = VCES
VGE = 0 V
VCE = 0 V, VGE = ±20 V
IC = 12 A, VGE = 15 V
Note 2
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
16N60C2
16N60C2D1
2.5
5.0 V
25 µA
50 µA
TJ=125°C
±100 nA
2.7 3.0 V
2.1 V
ISOPLUS 220TM (IXGC)
E153432
G
CE
G = Gate
E = Emitter
Isolated back surface*
C = Collector
Features
z DCB Isolated mounting tab
z UL recognized (E153432)
z Meets TO-273 package Outline
z High current handling capability
z MOS Gate turn-on
- drive simplicity
z Epoxy meets UL94V-0 flammability
classification
Applications
z Uninterruptible power supplies (UPS)
z Switched-mode and resonant-mode
power supplies
z AC motor speed control
z DC servo and robot drives
z DC choppers
Advantages
z Easy assembly
z High power density
z Very fast switching speeds for high
frequency applications
© 2004 IXYS All rights reserved
DS99149A(11/04)




IXYS

IXGC16N60C2D1 Datasheet Preview

IXGC16N60C2D1 Datasheet

HiPerFAST IGBT C2-Class High Speed IGBT in ISOPLUS220 Case

No Preview Available !

Symbol
gfs
Cies
Coes
Cres
Qg
Qge
Qgc
td(on)
tri
td(off)
tfi
Eoff
td(on)
tri
Eon
td(off)
tfi
Eoff
RthJC
RthCK
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
IC = 12A; VCE = 10 V,
Note 2.
VCE = 25 V, VGE = 0 V, f = 1 MHz
16N60C2
16N60C2D1
8
IC = 20A, VGE = 15 V, VCE = 0.5 VCES
Inductive load, TJ = 25°C
IC = 12 A; VGE = 15 V
VCE = 400 V; RG = Roff = 22
Note 1.
Inductive load, TJ = 125°C
IC = 12A; VGE = 15 V
VCE = 400 V; RG = Roff = 22
Note 1
16N60C2D1
12
720
55
65
19
32
6
10
25
15
60
35
60
25
18
0.38
115
70
150
0.25
S
pF
pF
pF
pF
nC
nC
nC
ns
ns
120 ns
100 ns
100 µJ
ns
ns
mJ
ns
ns
µJ
2.0 K/W
K/W
IXGC 16N60C2
IXGC 16N60C2D1
www.DataSheet4U.com
ISOPLUS220 Outline
Reverse Diode (FRED)
Symbol Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VF
IRM
trr
trr
RthJC
IF = 10 A, VGE = 0 V
TJ = 125°C
IF = 12 A; -diF/dt = 100 A/µs, VR = 100 V
VGE = 0 V; TJ = 125°C
IF = 1 A; -diF/dt = 100 A/µs; VR = 30 V, VGE = 0 V
2.66
1.66
V
V
2.5 A
110 ns
30 ns
2.5 K/W
Notes:
1. Switching times may increase for VCE (Clamp) > 0.8 • VCES, higher TJ,
or increased RG.
2. Pulse test, t 300 µs, duty cycle d 2 %
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by
one or moreof the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,710,405B2
6,710,463
6,727,585
6,759,692


Part Number IXGC16N60C2D1
Description HiPerFAST IGBT C2-Class High Speed IGBT in ISOPLUS220 Case
Maker IXYS
Total Page 2 Pages
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