IXFX26N60Q - HiPerFET Power MOSFET

IXYS (now Littelfuse)

Datasheet Details

Part number	IXFX26N60Q
Manufacturer	IXYS (now Littelfuse)
File Size	124.22 KB
Description	HiPerFET Power MOSFET
Datasheet	IXFX26N60Q Datasheet

Overview

Advance Technical Information www.DataSheet4U.com HiPerFETTM Power MOSFETs Q-Class N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg IXFK 26N60Q IXFX 26N60Q VDSS ID25 RDS(on) = 600 V = 26 A = 0.25 Ω trr ≤ 250 ns Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 2 Ω TC = 25°C Maximum Ratings 600 600 ± 20 ± 30 26 104 26 45 1.5 5 360 -55 ...

+150 150 -55 ...

+150 V V V V A A A mJ J V/ns W °C °C °C °C PLUS 247TM (IXFX) D (TAB) G D TO-264 AA (IXFK) G D S 1.6 mm (0.063 in) from case for 10 s Mounting torque TO-264 PLUS-247 TO-264 300 D (TAB) D = Drain TAB = Drain 0.9/6 Nm/lb.in.

Key Features

l l Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 600 2.5 TJ = 25°C TJ = 125°C 4.5 ± 200 25 1 0.25 V V nA µA mA Ω l l l l l VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250µA VDS = VGS, ID = 4 mA VGS = ±20 VDC, VDS = 0 VDS = VDSS VGS = 0 V Low gate charge International standard packages Epoxy meet UL 94 V-0, flammability classification Low RDS (on).

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