l l D = Drain TAB = Drain l 0.4/6 Nm/lb.in. 6 10 g g l RF capable MOSFETs Double metal process for low gate resistance Unclamped Inductive Switching (UIS) rated Low .

Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 1000 3.0 V 5.5 V ±20.

IXFX24N100Q3

IXFX24N120Q2

IXFX24N90Q

IXFX240N15T2

IXFX200N10P

IXFX20N120

IXFX20N120P

IXFX210N17T

IXFX21N100F

IXFX21N100Q

IXFX220N15P

IXFX220N17T2

IXFX230N20T

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