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IXYS

IXFV52N30P Datasheet Preview

IXFV52N30P Datasheet

PolarHT HiPerFET Power MOSFET

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Advanced Technical Information
PolarHTTM HiPerFET
Power MOSFET
N-Channel Enhancement Mode
Fast recovery intrinsic diode
IXFH 52N30P
IXFV 52N30P
IXFV 52N30PS
VDSS
ID25
RDS(on)
trr
= 300 Vwww.DataSheet4U.com
= 52 A
66 m
250 ns
Symbol
Test Conditions
Maximum Ratings TO-247 (IXFH)
VDSS
VDGR
VGS
VGSM
ID25
IDM
IAR
EAR
EAS
dv/dt
PD
TJ
TJM
Tstg
TL
FC
Md
Weight
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 M
Continuous
Transinet
TC = 25°C
TC = 25°C, pulse width limited by TJM
TC = 25°C
TC = 25°C
TC = 25°C
IS IDM, di/dt 100 A/µs, VDD VDSS,
TJ 150°C, RG = 4
TC = 25°C
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10s
Mounting Force
Mounting torque
(TO-247)
TO-247
PLUS220
300 V
300 V
±20 V
±30 V
52 A
150 A
52 A
30 mJ
1.0 J
10 V/ns
400 W
-55 ... +150
150
-55 ... +150
°C
°C
°C
300 °C
250 °C
11...65/2.5...111
N/lb
1.13/10 Nm/lb.in.
6.0 g
5.0 g
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
VDSS
VGS = 0 V, ID = 250 µA
Characteristic Values
Min. Typ. Max.
300 V
VGS(th)
VDS = VGS, ID = 4mA
3.0 5.0 V
IGSS VGS = ±30 VDC, VDS = 0
±100 nA
IDSS
VDS = VDSS
VGS = 0 V
TJ = 150°C
25 µA
1000 µA
RDS(on)
VGS = 10 V, ID = 0.5 ID25
Pulse test, t 300 µs, duty cycle d 2 %
66 m
GDS
PLUS220 (IXFV)
(TAB)
G
DS
PLUS220SMD (IXFV__S)
G
S
D (TAB)
G = Gate
S = Source
D = Drain
TAB = Drain
Features
z International standard packages
z Unclamped Inductive Switching (UIS)
rated
z Low package inductance
- easy to drive and to protect
z Fast intrinsic diode
Advantages
z Easy to mount
z Space savings
z High power density
© 2004 IXYS All rights reserved
DS99197A(9/04)




IXYS

IXFV52N30P Datasheet Preview

IXFV52N30P Datasheet

PolarHT HiPerFET Power MOSFET

No Preview Available !

IXFH 52N30P
IXFV 52N30P IXFV 52N30PS
Symbol
Test Conditions
Characteristic Values
(TJ
=
25°C,
unless otherwise specified)
Min. Typ. Max.
www.DataSheet4U.com
TO-247 (IXFH) Outline
gfs
VDS = 10 V; ID = 0.5 ID25, pulse test
20 30
S
Ciss
Coss
Crss
VGS = 0 V, VDS = 25 V, f = 1 MHz
3490
550
130
pF
pF
pF
123
td(on)
tr
td(off)
tf
Qg(on)
Qgs
Qgd
RthJC
RthCK
VGS = 10 V, VDS = 0.5 VDSS, ID = ID25
RG = 4 (External)
VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25
24
22
60
20
110
25
53
0.31
0.21
ns
ns
ns
ns
nC
nC
nC
K/W
K/W
Source-Drain Diode
Symbol
Test Conditions
Characteristic Values
(TJ
=
25°C,
unless otherwise specified)
min. typ. max.
IS VGS = 0 V
52 A
ISM Repetitive
150 A
VSD IF = IS, VGS = 0 V,
Pulse test, t 300 µs, duty cycle d 2 %
1.5 V
trr IF = 25 A, VGS = 0 V,
QRM di/dt = -100 A/µs, VR = 0 V
IRM
160 250 ns
800 nC
7A
PLUS220SMD (IXFV__S) Outline
Terminals: 1 - Gate
2 - Drain
3 - Source TAB - Drain
Dim. Millimeter
Min. Max.
A 4.7 5.3
A1 2.2 2.54
A2 2.2 2.6
b 1.0 1.4
b1 1.65 2.13
b2 2.87 3.12
C .4 .8
D 20.80 21.46
E 15.75 16.26
e 5.20 5.72
L 19.81 20.32
L1 4.50
P 3.55 3.65
Q 5.89 6.40
R 4.32 5.49
S 6.15 BSC
Inches
Min. Max.
.185 .209
.087 .102
.059 .098
.040 .055
.065 .084
.113 .123
.016 .031
.819 .845
.610 .640
0.205 0.225
.780 .800
.177
.140 .144
0.232 0.252
.170 .216
242 BSC
PLUS220 (IXFV) Outline
E
E1
L2
A
A1
E1
D
L3
L1
L
D1
E
E1
A
L2 A1
E1
2X e
3X b
c
A2
D
L3
L
L1
2X b
e
c
A2
A3
L4
Terminals: 1 - Gate
2 - Drain
3 - Source TAB - Drain
A
A1
A2
A3
b
c
D
D1
E
E1
e
L
L1
L2
L3
L4
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by
one or moreof the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
Terminals: 1 - Gate
2 - Drain
3 - Source TAB - Drain
A
A1
A2
b
c
D
D1
E
E1
e
L
L1
L2
L3
6,683,344
6,710,405B2
6,710,463
6,727,585
6,759,692


Part Number IXFV52N30P
Description PolarHT HiPerFET Power MOSFET
Maker IXYS
Total Page 5 Pages
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