IXFQ30N50P Datasheet - IXYS

IXFQ30N50P Power MOSFET

PolarHVTM HiPerFET Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFH 30N50P IXFT 30N50P IXFV 30N50P IXFV 30N50PS V= DSS ID25 = ≤ RDS(on) trr ≤ 500 V 30 A 200 mΩ 200 ns TO-247 AD (IXFH) Symbol VDSS VDGR VGSS V GSM ID25 IDM I AR EAR EAS dv/dt PD TJ TJM Tstg TL TSOLD M d FC Weight Test Conditions TJ = 25° C to 150° C TJ = 25° C to 150° C; RGS = 1 MΩ Continuous Transient TC = 25° C TC = 25° C, pulse width limited by TJM T C = 25° C TC = 25° C TC = 25° .

IXFQ30N50P Features

* l International standard packages l Unclamped Inductive Switching (UIS) rated l Low package inductance - easy to drive and to protect Advantages l Easy to mount l Space savings l High power density © 2006 IXYS All rights reserved DS99414E(04/06) Symbol gfs Ciss Coss Crss td(on) tr td(off) tf Qg(o

IXFQ30N50P Datasheet (367.16 KB)