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IXFN200N10P Datasheet Polar Hiperfet Power MOSFET

Manufacturer: IXYS (now Littelfuse)

Overview: Advanced Technical Information www.DataSheet4U.com PolarTM HiPerFET Power MOSFET N-Channel Enhancement Mode IXFN 200N10P IXFK 200N10P IXFX 200N10P VDSS ID25 RDS(on) = 100 V = 200 A = 7.5 mΩ Symbol VDSS VDGR VGS VGSM ID25 ID(RMS) IDM IAR EAR EAS dv/dt PD TJ TJM Tstg VISOL Md Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ Maximum Ratings 100 100 ± 20 ± 30 V V V V A A A A mJ J V/ns W °C °C °C V~ miniBLOC, SOT-227 B (IXFN) E153432 S G S D G = Gate S = Source D = Drain TC = 25°C External lead current limit TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 4 Ω TC = 25°C 200 100 400 60 100 4 10 800 -55 ... +175 175 -55 ... +150 Either Source terminal S can be used as the Source terminal or the Kelvin Source (gate return) terminal. TO-264 AA (IXFK) G D S D (TAB) 50/60 Hz, RMS, 1 minute Mounting torque Terminal torque 2500 PLUS247 (IXGX) 1.13/10 Nm/lb.in. 1.13/10 Nm/lb.in. C SOT-227B TO-264 PLUS247 Symbol Test Conditions (TJ = 25°C, unless otherwise specified) VDSS VGS(th) IGSS IDSS VGS = 0 V, ID = 250 µA VDS = VGS, ID = 500µA VGS = ±30 VDC, VDS = 0 VDS = VDSS VGS = 0 V VGS = 0 V TJ = 150°C TJ = 175°C 30 g 10 g 6 g Characteristic Values Min. Typ. Max. 100 3.0 5.0 ±100 25 250 1000 7.5 5.

This datasheet includes multiple variants, all published together in a single manufacturer document.

Key Features

  • z z C = Collector Tab = Collector z International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Advantages z z z RDS(on) VGS = 10 V, ID = 0.5 ID25 VGS = 15 V, ID = 400A Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % Easy to mount Space savings High power density DS99239B(03/05) © 2005 IXYS All rights reserved IXFK 200N10P Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) Min. Typ. Max. 60.

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