l l D = Drain TAB = Drain l 0.4/6 Nm/lb.in. 6 10 g g l RF capable MOSFETs Double metal process for low gate resistance Unclamped Inductive Switching (UIS) rated Low .

Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 1000 3.0 V 5.5 V ±20.

IXFK24N100Q3

IXFK24N120Q2

IXFK24N80P

IXFK24N90Q

IXFK240N15T2

IXFK200N10P

IXFK20N120

IXFK20N120P

IXFK20N80Q

IXFK210N17T

IXFK21N100F

IXFK21N100Q

IXFK220N15P

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