IXFJ40N30 mosfet equivalent, power mosfet.
G = Gate, S = Source, D = Drain, TAB = Drain G D S
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(TAB)
* Low profile, high power package
* Long creep and strike distances
* Easy up-grade path for TO-2.
- easy to drive and to protect rated designs
1.6 mm (0.062 in.) from case for 10 s
300 5
Symbol
Test Conditions
Cha.
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