* Low profile, high power package
* Long creep and strike distances
* Easy up-grade path for TO-220 designs
* Low RDS (on) HDMOSTM process
* Rugged po.

G = Gate, S = Source, D = Drain, TAB = Drain G D S é (TAB) 1.6 mm (0.062 in.) from case for 10 s 300 5 Symbol Test .

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