Datasheet4U Logo Datasheet4U.com

IXFI7N80P - Power MOSFETs

Features

  • z International standard packages z Unclamped Inductive Switching (UIS) rated z Low package inductance - easy to drive and to protect Advantages z Easy to mount z Space savings z High power density © 2006 IXYS All rights reserved DS99597E(08/06) IXFA7N80P IXFI7N80P IXFP7N80P Symbol g fs Ciss Coss Crss td(on) tr td(off) tf Q g(on) Q gs Q gd R thJC RthCS Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) Min. Typ. Max. V = 20 V; I = 0.5 I , pulse test DS D D25 5.

📥 Download Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
PolarHVTM HiPerFET Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFA 7N80P IXFI 7N80P IXFP 7N80P VDSS = 800 ID25 = 7 RDS(on) ≤ 1.44 t rr ≤ 250 V A Ω ns Symbol VDSS VDGR VGS V GSM ID25 IDM I AR EAR EAS dv/dt PD TJ TJM Tstg TL TSOLD M d Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM T C = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 10 Ω TC = 25°C 1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 s Mounting torque (TO-220, TO-3P) TO-220 TO-263 Maximum Ratings 800 V 800 V ± 30 V ± 40 V 7A 18 A 4A 20 mJ 300 mJ 10 V/ns 200 -55 ... +150 150 -55 ... +150 W °C °C °C 300 °C 260 °C 1.13/10 Nm/lb.in. 3g 2.
Published: |