The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
HiPerFETTM Power MOSFETs
Q-Class
Not for New Designs
IXFH40N30Q IXFT40N30Q
VDSS = 300V ID25 = 40A ≤RDS(on) 85mΩ
N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg
Symbol
VDSS VDGR
VGSS VGSM
ID25 IDM
IA EAS
dv/dt
PD
TJ TJM Tstg TL Tsold
Md Weight
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C
1.6mm (0.062in.) from Case for 10s Plastic Body for 10 seconds Mounting Torque (TO-247) TO-268 TO-247
Maximum Ratings 300 300
± 20 ± 30
40 160
40 1.0
V V
V V
A A
A J
5
300
-55 ... +150 150
-55 ... +150
300 260
1.13 / 10 4 6
V/ns
W
°C °C °C
°C °C
Nm/lb.in.
IXFH40N30Q Datasheet
