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IX4351NE 9A Low Side SiC MOSFET/IGBT

IX4351NE Description

INTEGRATED CIRCUITS DIVISION .
The IX4351NE is designed specifically to drive SiC MOSFETs and high power IGBTs.

IX4351NE Features

* Separate 9A peak source and sink outputs
* Operating Voltage Range: -10V to +25V
* Internal charge pump regulator for selectable negative gate drive bias
* Desaturation detection with soft shutdown sink driver
* TTL and CMOS compatible input
* Under

IX4351NE Applications

* Driving SiC MOSFETs and IGBTs
* On-board charger and DC charging station
* Industrial inverters
* PFC, AC/DC and DC/DC converters IX4351 Functional Block Diagram IN 6 FAULT 5 Gate and Control Logic VREG 8 VDD 4.6V Regulator SET 9 Charge Pump Control VDD 6.8

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Datasheet Details

Part number
IX4351NE
Manufacturer
IXYS
File Size
325.83 KB
Datasheet
IX4351NE-IXYS.pdf
Description
9A Low Side SiC MOSFET/IGBT

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Low Side SiC MOSFET IGBT IXYS
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