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IX4351NE - 9A Low Side SiC MOSFET/IGBT

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General Description

The IX4351NE is designed specifically to drive SiC MOSFETs and high power IGBTs.

Separate 9A source and sink outputs allow for tailored turn-on and turn-off timing while minimizing switching losses.

An internal negative charge regulator provides a selectable negative gate drive bias for improved dV/dt immunity and faster turn-off.

Overview

INTEGRATED CIRCUITS DIVISION.

Key Features

  • Separate 9A peak source and sink outputs.
  • Operating Voltage Range: -10V to +25V.
  • Internal charge pump regulator for selectable negative gate drive bias.
  • Desaturation detection with soft shutdown sink driver.
  • TTL and CMOS compatible input.
  • Under Voltage lockout (UVLO).
  • Thermal shutdown.
  • Open drain FAULT output.

More Datasheets from IXYS (now Littelfuse)

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