IX4351NE
Description
The IX4351NE is designed specifically to drive SiC MOSFETs and high power IGBTs.
Key Features
- Separate 9A peak source and sink outputs
- Operating Voltage Range: -10V to +25V
- Internal charge pump regulator for selectable
- Desaturation detection with soft shutdown sink driver
- Under Voltage lockout (UVLO)
- Thermal shutdown
- Open drain FAULT output
Applications
- Driving SiC MOSFETs and IGBTs
