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IXYS

CLA80MT1200NHB Datasheet Preview

CLA80MT1200NHB Datasheet

High Efficiency Thyristor

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High Efficiency Thyristor
Three Quadrants operation: QI - QIII
1~ Triac
Part number
CLA80MT1200NHB
CLA80MT1200NHB
VRRM = 1200 V
I TAV
=
40 A
VT = 1,26 V
Three Quadrants Operation
Positive Half Cycle
T2 +
T2
(-) IGT
IGT -
(+) IGT
T1
REF QII QI
T2 QIII QIV
T1
REF
+ IGT
(-) IGT
T1
REF
-
Negative Half Cycle
Note: All Polarities are referenced to T1
Features / Advantages:
Triac for line frequency
Three Quadrants Operation
- QI - QIII
Planar passivated chip
Long-term stability
of blocking currents and voltages
2
3
1
Backside: Terminal 2
Applications:
Line rectifying 50/60 Hz
Softstart AC motor control
DC Motor control
Power converter
AC power control
Lighting and temperature control
Package: TO-247
Industry standard outline
RoHS compliant
Epoxy meets UL 94V-0
Terms Conditions of usage:
The data contained in this product data sheet is exclusively intended for technically trained staff. The user will have to evaluate the suitability of the product for the intended application and
the completeness of the product data with respect to his application. The specifications of our components may not be considered as an assurance of component characteristics. The
information in the valid application- and assembly notes must be considered. Should you require product information in excess of the data given in this product data sheet or which concerns
the specific application of your product, please contact the sales office, which is responsible for you.
Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact the sales office, which is responsible for you.
Should you intend to use the product in aviation, in health or live endangering or life support applications, please notify. For any such application we urgently recommend
- to perform joint risk and quality assessments;
- the conclusion of quality agreements;
- to establish joint measures of an ongoing product survey, and that we may make delivery dependent on the realization of any such measures.
IXYS reserves the right to change limits, conditions and dimensions.
© 2015 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20150827c




IXYS

CLA80MT1200NHB Datasheet Preview

CLA80MT1200NHB Datasheet

High Efficiency Thyristor

No Preview Available !

CLA80MT1200NHB
Rectifier
Ratings
Symbol
VRSM/DSM
VRRM/DRM
I R/D
VT
I TAV
I RMS
VT0
rT
R thJC
RthCH
Ptot
I TSM
I²t
CJ
PGM
PGAV
(di/dt)cr
(dv/dt)cr
VGT
IGT
VGD
IGD
IL
IH
t gd
tq
Definition
Conditions
max. non-repetitive reverse/forward blocking voltage
max. repetitive reverse/forward blocking voltage
reverse current, drain current
VR/D = 1200 V
VR/D = 1200 V
forward voltage drop
IT = 40 A
I T = 80 A
IT = 40 A
I T = 80 A
average forward current
TC = 120°C
RMS forward current per phase
180° sine
threshold voltage
slope resistance
for power loss calculation only
TVJ = 25°C
TVJ = 25°C
TVJ = 25°C
TVJ = 125°C
TVJ = 25°C
min.
TVJ = 125 °C
TVJ = 150°C
TVJ = 150°C
thermal resistance junction to case
thermal resistance case to heatsink
total power dissipation
max. forward surge current
value for fusing
junction capacitance
max. gate power dissipation
average gate power dissipation
critical rate of rise of current
critical rate of rise of voltage
gate trigger voltage
gate trigger current
gate non-trigger voltage
gate non-trigger current
latching current
holding current
gate controlled delay time
turn-off time
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
VR = 400 V
tP = 30 µs
tP = 300 µs
f = 1 MHz
TC = 25°C
TVJ = 45°C
VR = 0 V
TVJ = 150°C
VR = 0 V
TVJ = 45°C
VR = 0 V
TVJ = 150°C
VR = 0 V
TVJ = 25°C
TC = 150°C
TVJ = 150 °C; f = 50 Hz
repetitive, IT = 120 A
tP = 200 µs; diG /dt = 0,3 A/µs;
IG = 0,3 A; V = VDRM
non-repet., IT = 40 A
V = VDRM
TVJ = 150°C
R GK = ∞; method 1 (linear voltage rise)
VD = 6 V
TVJ = 25°C
TVJ = -40°C
VD = 6 V
TVJ = 25°C
TVJ = -40°C
VD = VDRM
TVJ = 150°C
t p = 10 µs
TVJ = 25 °C
IG = 0,3 A; diG/dt = 0,3 A/µs
VD = 6 V RGK =
TVJ = 25 °C
VD = ½ VDRM
TVJ = 25 °C
IG = 0,3 A; diG/dt = 0,3 A/µs
VR = 100 V; IT = 40 A; V = VDRM TVJ =125 °C
di/dt = 10 A/µs dv/dt = 20 V/µs tp = 200 µs
typ. max. Unit
1300 V
1200 V
10 µA
2 mA
1,30 V
1,59 V
1,26 V
1,64 V
40 A
88 A
0,88 V
10 m
0,4 K/W
0,25 K/W
310 W
520 A
560 A
440 A
475 A
1,35 kA²s
1,31 kA²s
970 A²s
940 A²s
25 pF
10 W
5W
0,5 W
150 A/µs
500 A/µs
500 V/µs
1,7
1,9
± 70
± 90
0,2
±1
100
V
V
mA
mA
V
mA
mA
70 mA
2 µs
150 µs
IXYS reserves the right to change limits, conditions and dimensions.
© 2015 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20150827c


Part Number CLA80MT1200NHB
Description High Efficiency Thyristor
Maker IXYS
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CLA80MT1200NHB Datasheet PDF






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