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IS67WVQ4M4EDALL - 16Mb QUADRAM

Download the IS67WVQ4M4EDALL datasheet PDF. This datasheet also covers the IS66WVQ4M4EDALL variant, as both devices belong to the same 16mb quadram family and are provided as variant models within a single manufacturer datasheet.

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Note: The manufacturer provides a single datasheet file (IS66WVQ4M4EDALL-ISSI.pdf) that lists specifications for multiple related part numbers.

General Description

The IS66/67WVQ4M4EDALL/BLL are integrated memory device containing 16Mb Pseudo Static Random Access Memory, using a self-refresh DRAM array organized as 2M words by 8 bits.

The device supports Quad DDR interface, which is compatible with JEDEC standard x4 xSPI Flash.

Overview

IS66WVQ4M4EDALL/BLL IS67WVQ4M4EDALL/BLL 16Mb QUADRAM with On Chip ECC 1.8V/3.

Key Features

  • Industry Standard Serial Interface - Quad DDR (x4 xSPI) Interface: Command (1 byte) =SDR Address (2-byte) & Data = DDR - Low Signal Counts :7 Signal pins (CS#, SCLK, DQSM, SIO0~SIO3).
  • High Performance - On chip ECC (chunk size = 4 bit): 1-bit correction and 2-bit detection - Double Data Rate (DDR) Operation: 200MHz (200MB/s) at 1.8V VCC (1) 133MHz (133MB/s) at 3.0V VCC - Source Synchronous Output signal during Read Operation (DQSM) - Data Mask during Write Operation (DQSM) - Configura.

More Datasheets from ISSI (now Infineon)

Part Number Description
IS67WVQ4M4EDBLL 16Mb QUADRAM
IS67WVQ4M4DALL 1.8V/3.0V SERIAL PSRAM MEMORY
IS67WVQ4M4DBLL 1.8V/3.0V SERIAL PSRAM MEMORY
IS67WVQ16M4FALL 1.8V/3.0V SERIAL PSRAM MEMORY
IS67WVQ16M4FBLL 1.8V/3.0V SERIAL PSRAM MEMORY
IS67WV1M16EBLL ULTRA LOW POWER PSEUDO CMOS STATIC RAM
IS67WV51216EBLL ULTRA LOW POWER PSEUDO CMOS STATIC RAM
IS67WVC1M16ALL 16Mb Async/Page/Burst CellularRAM
IS67WVC2M16EALL 32Mb Async/Page/Burst CellularRAM
IS67WVC2M16ECLL 32Mb Async/Page/Burst CellularRAM