IS66WVQ16M4FBLL Overview
The IS66/67WVQ16M4FALL/BLL are integrated memory device containing 64Mb Pseudo Static Random Access Memory, using a self-refresh DRAM array organized as 16M words by 4 bits. The device supports Quad DDR interface, which is patible with JEDEC standard x4 xSPI Flash. The device supports Very Low Signal Count (7 signal pins;.
IS66WVQ16M4FBLL Key Features
- Industry Standard Serial Interface
- Quad DDR (x4 xSPI) Interface: mand (1 byte) =SDR Address (2-byte) & Data = DDR
- Low Signal Counts :7 Signal pins (CS#, SCLK, DQSM, SIO0~SIO3)
- High Performance
- Double Data Rate (DDR) Operation: 200MHz (200MB/s)
- Source Synchronous Output signal during Read Operation (DQSM)
- Data Mask during Write Operation (DQSM)
- Configurable Latency for Read/Write Operation
- Supports Variable Latency mode and Fixed Latency mode
- Configurable Drive Strength