IS66WVO4M8FBLL
Description
The IS66/67WVO4M8FALL/BLL are integrated memory device containing 32Mb Pseudo Static Random Access Memory using a self-refresh DRAM array organized as 4M words by 8 bits. The device supports Octal Peripheral Interface (Address, Command, and Data through 8 SIO pins), Very Low Signal Count (11 signal pins; SCLK, CS#, DQSM, and 8 SIOs), Hidden Refresh Operation, and Automotive temperature (A2, -40°C to +105°C) operation.
Key Features
- Industry Standard Serial Interface - Octal Peripheral Interface (OPI) Protocol - Low Signal Counts :11 Signal pins (CS#, SCLK, DQSM, SIO0~SIO7)
- High Performance - Up to 400MB/s - Double Transfer Rate (DTR) Operation - 200MHz (400MB/s) - Source Synchronous Output signal during Read Operation (DQSM) - Data Mask during Write Operation (DQSM) - Configurable Latency for Read/Write Operation) - Supports Variable Latency mode and Fixed Latency mode - Supports Wrapped Burst mode an Continuous Burst mode
- Burst Operation - Wrapped Burst and Hybrid Wrapped Burst - Configurable Burst Length : 16, 32, 64, and 128 - Word Order Burst Sequence - Continuous Burst Operation: Continues Read operation until the end of array address Continues Write operation even after the end of array address
