IS66WVE4M16TCLL Datasheet | ISSI

IS66/67WVE4M16EALL/BLL/CLL IS66/67WVE4M16TALL/BLL/CLL 64Mb Async/Page PSRAM AUGUST 2018 Overview The IS66/67WVE4M16EALL/BLL/CLL and IS66/67WVE4M16TALL/BLL/CLL integrated memory device containing 64Mbit Pseudo Static Random Access Memory using a self-refresh DRAM array organized as 4M words by 16 bits. The device includes several power saving modes : Partial Array Refresh mode where data is retained in a portion of the array and Deep Power Down mode. Both these modes reduce standby current drain. The die has separate power rails, VDDQ and VSSQ for the I/O to be run from a separate power supply from the device core. Features - Asynchronous and page mode interface - Dual voltage rails for...