IS65WV51216EBLL ram equivalent, ultra low power cmos static ram.
* High-speed access time: 45ns, 55ns
* CMOS low power operation
– 36 mW (typical) operating
– 12 µW (typical) CMOS standby
* T.
where the failure or malfunction of the product can reasonably be expected to cause failure of the life support system o.
The IS62WV51216EALL/ IS62WV51216EBLL are
high-speed, 8M bit static RAMs organized as 512K
words by 16 bits. It is fabricated using 's high-
performance CMOS technology. This highly reliable process coupled with innovative circuit design technique.
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