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IS65WV2568DBLL Datasheet ULTRA LOW POWER CMOS STATIC RAM

Manufacturer: ISSI (now Infineon)

Download the IS65WV2568DBLL datasheet PDF. This datasheet also includes the IS62WV2568DALL variant, as both parts are published together in a single manufacturer document.

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Note: The manufacturer provides a single datasheet file (IS62WV2568DALL-ISSI.pdf) that lists specifications for multiple related part numbers.

General Description

The ISSI IS62/65WV2568DALL and IS62/65WV2568DBLL are high-speed, 2M bit static RAMs organized as 256K words by 8 bits.

It is fabricated using ISSI's high- performance CMOS technology.This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low power consumption devices.

When CS1 is HIGH (deselected) or when CS2 is low (deselected) , the device assumes a standby mode at which the power dissipation can be reduced down with CMOS input levels.

Overview

  IS62/65WV2568DALL  IS62/65WV2568DBLL 256K x 8 LOW VOLTAGE, JUNE 2013 ULTRA LOW POWER CMOS STATIC.

Key Features

  • High-speed access time: 35ns, 45ns, 55ns.
  • CMOS low power operation.
  • 36 mW (typical) operating.
  • 9 µW (typical) CMOS standby.
  • TTL compatible interface levels.
  • Single power supply.
  • 1.8V ± 10% Vcc (IS62/65WV2568DALL).
  • 2.5V.
  • 3.6V Vcc (IS62/65WV2568DBLL).
  • Fully static operation: no clock or refresh required.
  • Three state outputs.
  • Industrial temperature available.
  • Lead-.

More Datasheets from ISSI (now Infineon)

Part Number Description
IS65WV2568DALL ULTRA LOW POWER CMOS STATIC RAM
IS65WV2568EALL ULTRA LOW POWER CMOS STATIC RAM
IS65WV2568EBLL ULTRA LOW POWER CMOS STATIC RAM
IS65WV25616ALL ULTRA LOW POWER CMOS STATIC SRAM
IS65WV25616BLL ULTRA LOW POWER CMOS STATIC SRAM
IS65WV25616DBLL ULTRA LOW POWER CMOS STATIC SRAM
IS65WV25616EBLL ULTRA LOW POWER CMOS STATIC RAM
IS65WV25616ECLL ULTRA LOW POWER CMOS STATIC RAM
IS65WV20488EALL ULTRA LOW POWER CMOS STATIC RAM
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