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IS65WV25616EBLL - ULTRA LOW POWER CMOS STATIC RAM

Download the IS65WV25616EBLL datasheet PDF. This datasheet also covers the IS62WV25616EALL variant, as both devices belong to the same ultra low power cmos static ram family and are provided as variant models within a single manufacturer datasheet.

General Description

The ISSI IS62/65WV25616EALL/EBLL/ECLL are high-speed, low power, 4M bit static RAMs organized as 256K words by 16 bits.

It is fabricated using ISSI's high-performance CMOS technology.

Key Features

  • High-speed access time: 35ns, 45ns, 55ns.
  • CMOS low power operation.
  • Operating Current: 22 mA (max) at 85°C.
  • CMOS Standby Current: 3.7uA (typ) at 25°C.
  • TTL compatible interface levels.
  • Single power supply.
  • 1.65V-2.2V VDD (IS62/65WV25616EALL).
  • 2.2V-3.6V VDD (IS62/65WV25616EBLL).
  • 3.3V +/-5% VDD (IS62/65WV25616ECLL).
  • Package : 44-pin TSOP (Type II) 48-pin mini BGA.
  • Commercial, Industrial and Automotive temperature support.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IS62WV25616EALL-ISSI.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
IS65WV102416BLL 1M x 16 HIGH-SPEED LOW POWER ASYNCHRONOUS CMOS STATIC RAM Integrated Silicon Solution
IS65C256AL 32K x 8 LOW POWER CMOS STATIC RAM Integrated Silicon Solution
IS65C51216AL ULTRA LOW POWER CMOS STATIC RAM Integrated Silicon Solution
IS65C6416AL 64K x 16 HIGH-SPEED CMOS STATIC RAM Integrated Silicon Solution
IS65LV256AL 32K x 8 LOW VOLTAGE CMOS STATIC RAM Integrated Silicon Solution

Other Datasheets by ISSI (now Infineon)

Part Number Description
IS65WV25616ECLL ULTRA LOW POWER CMOS STATIC RAM
IS65WV25616ALL ULTRA LOW POWER CMOS STATIC SRAM
IS65WV25616BLL ULTRA LOW POWER CMOS STATIC SRAM
IS65WV25616DBLL ULTRA LOW POWER CMOS STATIC SRAM
IS65WV2568DALL ULTRA LOW POWER CMOS STATIC RAM

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
IS62WV25616EALL/EBLL/ECLL IS65WV25616EBLL/ECLL 256Kx16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM NOVEMBER 2018 KEY FEATURES  High-speed access time: 35ns, 45ns, 55ns  CMOS low power operation – Operating Current: 22 mA (max) at 85°C – CMOS Standby Current: 3.7uA (typ) at 25°C  TTL compatible interface levels  Single power supply –1.65V-2.2V VDD (IS62/65WV25616EALL) – 2.2V-3.6V VDD (IS62/65WV25616EBLL) – 3.3V +/-5% VDD (IS62/65WV25616ECLL)  Package : 44-pin TSOP (Type II) 48-pin mini BGA  Commercial, Industrial and Automotive temperature support  Lead-free available DESCRIPTION The ISSI IS62/65WV25616EALL/EBLL/ECLL are high-speed, low power, 4M bit static RAMs organized as 256K words by 16 bits. It is fabricated using ISSI's high-performance CMOS technology.