IS65WV25616EBLL ram equivalent, ultra low power cmos static ram.
* High-speed access time: 35ns, 45ns, 55ns
* CMOS low power operation
– Operating Current: 22 mA (max) at 85°C
– CMOS Standby Curr.
where the failure or malfunction of the product can reasonably be expected to cause failure of the life support system o.
The ISSI IS62/65WV25616EALL/EBLL/ECLL are high-speed, low power, 4M bit static RAMs organized as 256K words by 16 bits. It is fabricated using ISSI's high-performance CMOS technology.
This highly reliable process coupled with innovative circuit desig.
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