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IS65WV10248HBLL - ULTRA LOW POWER CMOS STATIC RAM

Download the IS65WV10248HBLL datasheet PDF. This datasheet also covers the IS62WV10248HALL variant, as both devices belong to the same ultra low power cmos static ram family and are provided as variant models within a single manufacturer datasheet.

Description

The ISSI IS62/65WV10248HALL/BLL are high-speed, low power, 8M bit static RAMs organized as 1M words by 8 bits.

It is fabricated using ISSI's high-performance CMOS technology.

Features

  • High-speed access time: 45ns, 55ns.
  • CMOS low power operation.
  • Operating Current: 25 mA (max. ).
  • CMOS Standby Current: 3.2 uA (typ. , 25°C).
  • TTL compatible interface levels.
  • Single power supply.
  • 1.65V-2.2V VDD (IS62/65WV10248HALL).
  • 2.2V-3.6V VDD (IS62/65WV10248HBLL).
  • Three state outputs.
  • Industrial and Automotive temperature support.
  • Lead-free available.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IS62WV10248HALL-ISSI.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
IS62WV10248HALL/BLL IS65WV10248HALL/BLL 1Mx8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM NOVEMBER 2022 KEY FEATURES • High-speed access time: 45ns, 55ns • CMOS low power operation – Operating Current: 25 mA (max.) – CMOS Standby Current: 3.2 uA (typ., 25°C) • TTL compatible interface levels • Single power supply –1.65V-2.2V VDD (IS62/65WV10248HALL) – 2.2V-3.6V VDD (IS62/65WV10248HBLL) • Three state outputs • Industrial and Automotive temperature support • Lead-free available FUNCTIONAL BLOCK DIAGRAM DESCRIPTION The ISSI IS62/65WV10248HALL/BLL are high-speed, low power, 8M bit static RAMs organized as 1M words by 8 bits. It is fabricated using ISSI's high-performance CMOS technology.
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