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IS64WV1288EEBLL - 256K x 8 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM

Download the IS64WV1288EEBLL datasheet PDF. This datasheet also covers the IS61WV1288EEBLL variant, as both devices belong to the same 256k x 8 high speed asynchronous cmos static ram family and are provided as variant models within a single manufacturer datasheet.

Description

technology.

Features

  • High-speed access time: 8, 10 ns.
  • Low Active Power: 85 mW (typical).
  • Low Standby Power: 7 mW (typical) CMOS standby.
  • Single power supply.
  • Fully static operation: no clock or refresh required.
  • Three state outputs.
  • Industrial and Automotive temperature support.
  • Lead-free available.
  • Error Detection and Error Correction.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IS61WV1288EEBLL_ISSI.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
IS64WV12816DBLL 128K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM Integrated Silicon Solution
IS64WV12816DBLS 128K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM Integrated Silicon Solution
IS64WV51216BLL 512K x 16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM Integrated Silicon Solution
IS64C25616AL 256K x 16 HIGH-SPEED CMOS STATIC RAM Integrated Silicon Solution
IS64C25616AS 256K x 16 HIGH-SPEED CMOS STATIC RAM Integrated Silicon Solution

Other Datasheets by ISSI (now Infineon)

Part Number Description
IS64WV1288DBLL 128K x 8 HIGH-SPEED CMOS STATIC RAM
IS64WV1288DBLS 128K x 8 HIGH-SPEED CMOS STATIC RAM
IS64WV12816BLL 128K x 16 HIGH-SPEED CMOS STATIC RAM
IS64WV12816EDBLL 128K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM
IS64WV12816EFALL 128K x 16 HIGH SPEED AYNCHRONOUS CMOS STATIC RAM

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
IS61WV1288EEBLL IS64WV1288EEBLL 128K x 8 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH ECC MAY 2020 FEATURES • High-speed access time: 8, 10 ns • Low Active Power: 85 mW (typical) • Low Standby Power: 7 mW (typical) CMOS standby • Single power supply • Fully static operation: no clock or refresh required • Three state outputs • Industrial and Automotive temperature support • Lead-free available • Error Detection and Error Correction DESCRIPTION The ISSI IS61/64WV1288EEBLL is a high-speed, 1,048,576-bit static RAMs organized as 131,072 words by 8 bits.It is fabricated using ISSI's high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low power consumption devices.
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