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IS64WV12816EDBLL Datasheet 128K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM

Manufacturer: ISSI (now Infineon)

Download the IS64WV12816EDBLL datasheet PDF. This datasheet also includes the IS61WV12816EDBLL variant, as both parts are published together in a single manufacturer document.

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Note: The manufacturer provides a single datasheet file (IS61WV12816EDBLL-ISSI.pdf) that lists specifications for multiple related part numbers.

General Description

The ISSI IS61/64WV12816EDBLL is a high-speed, 2,097,152-bit static RAMs organized as 131,072 words by 16 bits.

It is fabricated using ISSI's high-performance CMOS technology.

This highly reliable process coupled with innovative circuit design techniques, yields highperformance and low power consumption devices.

Overview

IS61WV12816EDBLL IS64WV12816EDBLL 128K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH ECC MAY.

Key Features

  • High-speed access time: 8, 10 ns.
  • Low Active Power: 85 mW (typical).
  • Low Standby Power: 7 mW (typical) CMOS standby.
  • Single power supply.
  • Vdd 2.4V to 3.6V (10 ns).
  • Vdd 3.3V ± 10% (8 ns).
  • Fully static operation: no clock or refresh required.
  • Three state outputs.
  • Data control for upper and lower bytes.
  • Industrial and Automotive temperature support.
  • Lead-free available.
  • Error Detection and E.

📁 Similar Datasheet

Brand Logo Part Number Description Manufacturer
Integrated Silicon Solution Logo IS64WV12816DBLL 128K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM Integrated Silicon Solution
Integrated Silicon Solution Logo IS64WV12816DBLS 128K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM Integrated Silicon Solution

More Datasheets from ISSI (now Infineon)

Part Number Description
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