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IS64WV12816BLL - 128K x 16 HIGH-SPEED CMOS STATIC RAM

Description

The ISSI IS61WV12816BLL and IS64WV12816BLL are high-speed, 2,097,152-bit static RAM organized as 131,072 words by 16 bits.

They are fabricated using ISSI's highperformance CMOS technology.

Features

  • High-speed access time: 12 ns: 3.3V + 10% 15 ns: 2.5V-3.6V.
  • Operating Current: 25mA (typ. ).
  • Stand by Current: 400µA(typ. ).
  • TTL and CMOS compatible interface levels.
  • Fully static operation: no clock or refresh required.
  • Three state outputs.
  • Data control for upper and lower bytes.
  • Industrial and Automotive temperatures available.
  • Lead-free available.

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Other Datasheets by ISSI (now Infineon)

Part Number Description
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com IS61WV12816BLL IS64WV12816BLL 128K x 16 HIGH-SPEED CMOS STATIC RAM ISSI FEBRUARY 2006 ® FEATURES • High-speed access time: 12 ns: 3.3V + 10% 15 ns: 2.5V-3.6V • Operating Current: 25mA (typ.) • Stand by Current: 400µA(typ.) • TTL and CMOS compatible interface levels • Fully static operation: no clock or refresh required • Three state outputs • Data control for upper and lower bytes • Industrial and Automotive temperatures available • Lead-free available DESCRIPTION The ISSI IS61WV12816BLL and IS64WV12816BLL are high-speed, 2,097,152-bit static RAM organized as 131,072 words by 16 bits. They are fabricated using ISSI's highperformance CMOS technology.
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