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IS62WV25616DBLL - ULTRA LOW POWER CMOS STATIC SRAM

Download the IS62WV25616DBLL datasheet PDF. This datasheet also covers the IS62WV25616DALL variant, as both devices belong to the same ultra low power cmos static sram family and are provided as variant models within a single manufacturer datasheet.

General Description

256K words by 16 bits.

Key Features

  • High-speed access time: 35, 45, 55 ns.
  • CMOS low power operation 30 mW (typical) operating 6 µW (typical) CMOS standby.
  • TTL compatible interface levels.
  • Single power supply 1.65V--2.2V Vdd (IS62WV25616DALL) 2.3V--3.6V Vdd (IS62/65WV25616DBLL).
  • Fully static operation: no clock or refresh required.
  • Three state outputs.
  • Data control for upper and lower bytes.
  • Industrial and Automotive temperature support.
  • Lead-free a.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IS62WV25616DALL-ISSI.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
IS62WV25616ALL ULTRA LOW POWER CMOS STATIC RAM Integrated Silicon Solution
IS62WV25616BLL ULTRA LOW POWER CMOS STATIC RAM Integrated Silicon Solution
IS62WV2568ALL ULTRA LOW POWER CMOS STATIC RAM Integrated Silicon Solution
IS62WV2568BLL ULTRA LOW POWER CMOS STATIC RAM Integrated Silicon Solution
IS62WV20488ALL 2M x 8 HIGH-SPEED LOW POWER CMOS STATIC RAM Integrated Silicon Solution

Other Datasheets by ISSI (now Infineon)

Part Number Description
IS62WV25616DALL ULTRA LOW POWER CMOS STATIC SRAM
IS62WV25616EALL ULTRA LOW POWER CMOS STATIC RAM
IS62WV25616EBLL ULTRA LOW POWER CMOS STATIC RAM
IS62WV25616ECLL ULTRA LOW POWER CMOS STATIC RAM
IS62WV2568DALL ULTRA LOW POWER CMOS STATIC RAM

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
IS62WV25616DALL/DBLL, IS65WV25616DBLL 256K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC SRAM MARCH 2015 FEATURES • High-speed access time: 35, 45, 55 ns • CMOS low power operation 30 mW (typical) operating 6 µW (typical) CMOS standby • TTL compatible interface levels • Single power supply 1.65V--2.2V Vdd (IS62WV25616DALL) 2.3V--3.6V Vdd (IS62/65WV25616DBLL) • Fully static operation: no clock or refresh required • Three state outputs • Data control for upper and lower bytes • Industrial and Automotive temperature support • Lead-free available • 2 CS option available DESCRIPTION The ISSI IS62WV25616DALL and IS62/65WV25616DBLL are high-speed, low power, 4M bit SRAMs organized as 256K words by 16 bits. It is fabricated using ISSI's high- performance CMOS technology.