IS62WV12816DALL ram equivalent, ultra low power cmos static ram.
* High-speed access time: 35ns, 45ns, 55ns
* CMOS low power operation
– 36 mW (typical) operating
– 9 µW (typical) CMOS standby
where the failure or malfunction of the product can reasonably be expected to cause failure of the life support system o.
The ISSI IS62/65WV12816DALL/DBLL are high-speed,
2M bit static RAMs organized as 128K words by 16
bits. It is fabricated using ISSI's high-performance
CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yi.
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