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IS62C25616BL Datasheet 256K x 16 HIGH-SPEED CMOS STATIC RAM

Manufacturer: ISSI (now Infineon)

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General Description

The ISSI IS62C25616BL and IS65C25616BL are high- speed, 4,194,304-bit static RAMs organized as 262,144 words by 16 bits.

They are fabricated using ISSI's high- performance CMOS technology.This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 12 ns with low power consumption.

When CE is HIGH (deselected), the device assumes a standby mode at which the power dissipation can be reduced down with CMOS input levels.

Overview

IS62C25616BL, IS65C25616BL 256K x 16 HIGH-SPEED CMOS STATIC RAM MARCH.

Key Features

  • High-speed access time: 45 ns.
  • Low Active Power: 50 mW (typical).
  • Low Standby Power: 10 mW (typical) CMOS standby.
  • TTL compatible interface levels.
  • Single 5V ± 10% power supply.
  • Fully static operation: no clock or refresh required.
  • Package: 44-pin TSOP (Type II).
  • Commercial, Industrial and Automotive temper- ature ranges available.
  • Lead-free available.

More Datasheets from ISSI (now Infineon)

Part Number Description
IS62C25616EL ULTRA LOW POWER CMOS STATIC RAM
IS62C256 32K x 8 LOW POWER CMOS STATIC RAM
IS62C1024 128K x 8 HIGH-SPEED CMOS STATIC RAM
IS62C1024AL 128K x 8 LOW POWER CMOS STATIC RAM
IS62C5128BL 512K x 8 HIGH-SPEED CMOS STATIC RAM
IS62C5128EL ULTRA LOW POWER CMOS STATIC RAM
IS62LV12816ALL 128K X 16 CMOS Static RAM
IS62LV12816BLL ULTRA LOW POWER CMOS STATIC RAM
IS62LV12816L 128K x 16 CMOS STATIC RAM
IS62WV102416DALL ULTRA LOW POWER & LOW POWER CMOS STATIC RAM