IS61WV2568FALL ram equivalent, 256k x 8 high speed aynchronous cmos static ram.
* High-speed access time: 8, 10ns, 12ns
* Low Active Current: 35mA (Max., 10ns, I-temp)
* Low Standby Current: 10 mA (Max., I-temp)
* Single power supply
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where the failure or malfunction of the product can reasonably be expected to cause failure of the life support system o.
The ISSI IS61/64WV2568FALL/FBLL are high-speed, low power, 2M bit static RAMs organized as 256K words by 8 bits. It is fabricated using ISSI's high-performance CMOS technology.
This highly reliable process coupled with innovative circuit design techn.
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