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IS61WV12816EFALL Datasheet, ISSI

IS61WV12816EFALL ram equivalent, 128k x 16 high speed aynchronous cmos static ram.

IS61WV12816EFALL Avg. rating / M : 1.0 rating-11

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IS61WV12816EFALL Datasheet

Features and benefits


* High-speed access time: 8ns, 10ns, 12ns
* Single power supply
  – 1.65V-2.2V VDD(IS61/64WV12816EFALL)
  – 2.4V-3.6V VDD (IS61/64WV12.

Application

where the failure or malfunction of the product can reasonably be expected to cause failure of the life support system o.

Description

The ISSI IS61/64WV12816EFALL/EFBLL are high-speed, low power, 2M bit static RAMs organized as 128K words by 16 bits. It is fabricated using ISSI's high-performance CMOS technology and implemented ECC function to improve reliability. This highly relia.

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TAGS

IS61WV12816EFALL
128K
HIGH
SPEED
AYNCHRONOUS
CMOS
STATIC
RAM
IS61WV12816EFBLL
IS61WV12816EDBLL
IS61WV12816BLL
ISSI

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