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IS61WV12816EFALL Datasheet 128K x 16 HIGH SPEED AYNCHRONOUS CMOS STATIC RAM

Manufacturer: ISSI (now Infineon)

Download the IS61WV12816EFALL datasheet PDF. This datasheet also includes the IS64WV12816EFALL variant, as both parts are published together in a single manufacturer document.

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Note: The manufacturer provides a single datasheet file (IS64WV12816EFALL-ISSI.pdf) that lists specifications for multiple related part numbers.

General Description

The ISSI IS61/64WV12816EFALL/EFBLL are high-speed, low power, 2M bit static RAMs organized as 128K words by 16 bits.

It is fabricated using ISSI's high-performance CMOS technology and implemented ECC function to improve reliability.

This highly reliable process coupled with innovative circuit design techniques including ECC (SEC-DED: Single Error Correcting-Double Error Detecting) yield high-performance and highly reliable devices.

Overview

IS61/64WV12816EFALL IS61/64WV12816EFBLL 128Kx16 HIGH SPEED AYNCHRONOUS CMOS STATIC RAM with ECC APRIL 2022.

Key Features

  • High-speed access time: 8ns, 10ns, 12ns.
  • Single power supply.
  • 1.65V-2.2V VDD(IS61/64WV12816EFALL).
  • 2.4V-3.6V VDD (IS61/64WV12816EFBLL).
  • Error Detection and Correction with optional ERR1/ERR2 output pin: - ERR1 pin indicates 1-bit error detection and correction. - ERR2 pin indicates 2-bit error detection.
  • Three state outputs.
  • Industrial and Automotive temperature support.
  • Lead-free available.

📁 Similar Datasheet

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Integrated Silicon Solution Logo IS61WV12816DALL 128K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM Integrated Silicon Solution
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Integrated Silicon Solution Logo IS61WV12816DBLL 128K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM Integrated Silicon Solution
Integrated Silicon Solution Logo IS61WV12816DBLS 128K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM Integrated Silicon Solution

More Datasheets from ISSI (now Infineon)

Part Number Description
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