IS61WV12816EFALL ram equivalent, 128k x 16 high speed aynchronous cmos static ram.
* High-speed access time: 8ns, 10ns, 12ns
* Single power supply
– 1.65V-2.2V VDD(IS61/64WV12816EFALL)
– 2.4V-3.6V VDD (IS61/64WV12.
where the failure or malfunction of the product can reasonably be expected to cause failure of the life support system o.
The ISSI IS61/64WV12816EFALL/EFBLL are high-speed, low power, 2M bit static RAMs organized as 128K words by 16 bits. It is fabricated using ISSI's high-performance CMOS technology and implemented ECC function to improve reliability.
This highly relia.
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