IS61WV102416FALL ram equivalent, 1m x 16 high-speed asynchronous cmos static ram.
* High-speed access time: 8ns, 10ns, 20ns
* High- performance, low power CMOS process
* Multiple center power and ground pins for
greater noise immunity
*.
where the failure or malfunction of the product can reasonably be expected to cause failure of the life support system o.
FUNCTIONAL BLOCK DIAGRAM
The ISSI IS61/64WV102416FALL/BLL are high-speed, 16M bit static RAMs organized as 1024K words by 16 bits. It is fabricated using ISSI's high-performance CMOS technology.
This highly reliable process coupled with innovative c.
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