IS61QDB24M18A - 72Mb QUAD (Burst 2) Synchronous SRAM

ISSI

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Datasheet Details

Part number: IS61QDB24M18A
Manufacturer: ISSI
File Size: 592.78 KB
Datasheet: IS61QDB24M18A-ISSI.pdf
Description: 72Mb QUAD (Burst 2) Synchronous SRAM

IS61QDB24M18A Product details

Description

The and are synchronous, high-performance CMOS static random access memory (SRAM) devices.These SRAMs have separate I/Os, eliminating the need for high-speed bus turnaround.The rising edge of K clock initiates the read/write operation, and all internal operations are self-timed.Refer to the for a description of the basic operations of these SRAMs.The input address bus operates at double data rate.The following are registered internally on the rising edge of the K clock:. Read.

Features

2Mx36 and 4Mx18 configuration available.
On-chip Delay-Locked loop (DLL) for wide data valid window.
Separate independent read and write ports with concurrent read and write operations.
Synchronous pipeline read with EARLY write operation.
Double Data Rate (DDR) interface for read and write input ports.
Fixed 2-bit burst for read and write operations.
Clock stop support.
Two input clocks (K and K#) for address and control registering at rising edge.

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72Mb QUAD Burst Synchronous SRAM ISSI

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