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IS61NVP51218A - 9Mb STATE BUS SRAM

Download the IS61NVP51218A datasheet PDF (IS61NVP25636A included). The manufacturer datasheet provides complete specifications, pinout details, electrical characteristics, and typical applications for 9mb state bus sram .

Description

The 9 Meg 'NLP/NVP' product family feature high-speed, low-power synchronous static RAMs designed to provide a burstable, high-performance, 'no wait' state, device for networking and communications applications.

Features

  • 100 percent bus utilization.
  • No wait cycles between Read and Write.
  • Internal self-timed write cycle.
  • Individual Byte Write Control.
  • Single R/W (Read/Write) control pin.
  • Clock controlled, registered address, data and control.
  • Interleaved or linear burst sequence control us- ing MODE input.
  • Three chip enables for simple depth expansion and address pipelining.
  • Power Down mode.
  • Common data inputs and data outp.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IS61NVP25636A_ISSI.pdf) that lists specifications for multiple related part numbers.

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Full PDF Text Transcription

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IS61NLP25636A/IS61NVP25636A IS61NLP51218A/IS61NVP51218A  256K x 36 and 512K x 18 9Mb, PIPELINE 'NO WAIT' STATE BUS SRAM AUGUST 2014 FEATURES • 100 percent bus utilization • No wait cycles between Read and Write • Internal self-timed write cycle • Individual Byte Write Control • Single R/W (Read/Write) control pin • Clock controlled, registered address, data and control • Interleaved or linear burst sequence control us- ing MODE input • Three chip enables for simple depth expansion and address pipelining • Power Down mode • Common data inputs and data outputs • CKE pin to enable clock and suspend operation • JEDEC 100-pin TQFP, 165-ball PBGA and 119-ball PBGA packages • Power supply: NVP: Vdd 2.5V (± 5%), Vddq 2.5V (± 5%) NLP: Vdd 3.3V (± 5%), Vddq 3.3V/2.
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