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IS46TR85120B - 4Gb DDR3 SDRAM

This page provides the datasheet information for the IS46TR85120B, a member of the IS46TR16256B 4Gb DDR3 SDRAM family.

Datasheet Summary

Description

- JEDEC Standard Sy

Features

  • Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V.
  • Low Voltage (L): VDD and VDDQ = 1.35V + 0.1V, -0.067V - Backward compatible to 1.5V.
  • High speed data transfer rates with system frequency up to 1066 MHz.
  • 8 internal banks for concurrent operation.
  • 8n-Bit pre-fetch architecture.
  • Programmable CAS Latency.
  • Programmable Additive Latency: 0, CL-1,CL-2.
  • Programmable CAS WRITE latency (CWL) based on tCK.
  • Programmable Burst L.

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Datasheet preview – IS46TR85120B

Datasheet Details

Part number IS46TR85120B
Manufacturer ISSI
File Size 4.09 MB
Description 4Gb DDR3 SDRAM
Datasheet download datasheet IS46TR85120B Datasheet
Additional preview pages of the IS46TR85120B datasheet.

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Full PDF Text Transcription

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IS43/46TR16256B, IS43/46TR16256BL, IS43/46TR85120B, IS43/46TR85120BL 512Mx8, 256Mx16 4Gb DDR3 SDRAM FEATURES • Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V • Low Voltage (L): VDD and VDDQ = 1.35V + 0.1V, -0.067V - Backward compatible to 1.5V • High speed data transfer rates with system frequency up to 1066 MHz • 8 internal banks for concurrent operation • 8n-Bit pre-fetch architecture • Programmable CAS Latency • Programmable Additive Latency: 0, CL-1,CL-2 • Programmable CAS WRITE latency (CWL) based on tCK • Programmable Burst Length: 4 and 8 • Programmable Burst Sequence: Sequential or Interleave • BL switch on the fly • Auto Self Refresh(ASR) • Self Refresh Temperature(SRT) • Refresh Interval: 7.8 µs (8192 cycles/64 ms) Tc= -40°C to 85°C 3.
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