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IS46TR16128BL - 2Gb DDR3 SDRAM

Download the IS46TR16128BL datasheet PDF. This datasheet also covers the IS46TR16128B variant, as both devices belong to the same 2gb ddr3 sdram family and are provided as variant models within a single manufacturer datasheet.

Features

  • Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V.
  • Low Voltage (L): VDD and VDDQ = 1.35V + 0.1V, -0.067V - Backward compatible to 1.5V.
  • High speed data transfer rates with system frequency up to 1066 MHz.
  • 8 internal banks for concurrent operation.
  • 8n-Bit pre-fetch architecture.
  • Programmable CAS Latency.
  • Programmable Additive Latency: 0, CL-1,CL-2.
  • Programmable CAS WRITE latency (CWL) based on tCK.
  • Programmable Burst Length: 4 and 8.
  • Programmable Bu.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IS46TR16128B-ISSI.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription

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IS43/46TR16128B, IS43/46TR16128BL, IS43/46TR82560B, IS43/46TR82560BL 256Mx8, 128Mx16 2Gb DDR3 SDRAM FEATURES  Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V  Low Voltage (L): VDD and VDDQ = 1.35V + 0.1V, -0.067V - Backward compatible to 1.5V  High speed data transfer rates with system frequency up to 1066 MHz  8 internal banks for concurrent operation  8n-Bit pre-fetch architecture  Programmable CAS Latency  Programmable Additive Latency: 0, CL-1,CL-2  Programmable CAS WRITE latency (CWL) based on tCK  Programmable Burst Length: 4 and 8  Programmable Burst Sequence: Sequential or Interleave  BL switch on the fly  Auto Self Refresh(ASR)  Self Refresh Temperature(SRT) FEBRUARY 2018  Refresh Interval: 7.8 us (8192 cycles/64 ms) Tc= -40°C to 85°C 3.
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