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IS46LR32640B Datasheet

Manufacturer: ISSI (now Infineon)
IS46LR32640B datasheet preview

IS46LR32640B Details

Part number IS46LR32640B
Datasheet IS46LR32640B-ISSI.pdf
File Size 2.70 MB
Manufacturer ISSI (now Infineon)
Description 2Gb Mobile DDR SDRAM
IS46LR32640B page 2 IS46LR32640B page 3

IS46LR32640B Overview

This product uses a double-data-rate architecture to achieve high-speed operation. The Data Input/ Output signals are transmitted on a 16-bit or 32-bit bus. The double data rate architecture is essentially a 2N prefetch architecture with an interface designed to transfer two data words per clock cycle at the I/O pins.

IS46LR32640B Key Features

  • JEDEC standard 1.8V power supply
  • VDD = 1.8V, VDDQ = 1.8V
  • Four internal banks for concurrent operation
  • MRS cycle with address key programs
  • CAS latency 2, 3 (clock)
  • Burst length (2, 4, 8)
  • Burst type (sequential & interleave)
  • Fully differential clock inputs (CK, /CK)
  • All inputs except data & DM are sampled at the rising edge of the system clock
  • Data I/O transaction on both edges of data strobe

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