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IS46LR32640A - 16M x 32Bits x 4Banks Mobile DDR SDRAM

Description

The IS43/46LR32640A is 2,147,483,648 bits CMOS Mobile Double Data Rate Synchronous DRAM organized as 4 banks of 33,554,432 words x 32 bits.

This product uses a double-data-rate architecture to achieve high-speed operation.

The Data Input/ Output signals are transmitted on a 32-bit bus.

Features

  • JEDEC standard 1.8V power supply.
  • VDD = 1.8V, VDDQ = 1.8V.
  • Four internal banks for concurrent operation.
  • MRS cycle with address key programs - CAS latency 2, 3 (clock) - Burst length (2, 4, 8) - Burst type (sequential & interleave).
  • Fully differential clock inputs (CK, /CK).
  • All inputs except data & DM are sampled at the rising edge of the system clock.
  • Data I/O transaction on both edges of data strobe.
  • Bidirectional data.

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Other Datasheets by ISSI (now Infineon)

Part Number Description
IS46LR32640B 2Gb Mobile DDR SDRAM
IS46LR32100C 512K x 32Bits x 2Banks Mobile DDR SDRAM
IS46LR32100D 512K x 32Bits x 2Banks Mobile DDR SDRAM
IS46LR32160B 4M x 32Bits x 4Banks Mobile DDR SDRAM
IS46LR32160C 4M x 32Bits x 4Banks Mobile DDR SDRAM

Full PDF Text Transcription (Reference)

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IS43/46LR32640A 16M x 32Bits x 4Banks Mobile DDR SDRAM Description The IS43/46LR32640A is 2,147,483,648 bits CMOS Mobile Double Data Rate Synchronous DRAM organized as 4 banks of 33,554,432 words x 32 bits. This product uses a double-data-rate architecture to achieve high-speed operation. The Data Input/ Output signals are transmitted on a 32-bit bus. The double data rate architecture is essentially a 2N prefetch architecture with an interface designed to transfer two data words per clock cycle at the I/O pins. This product offers fully synchronous operations referenced to both rising and falling edges of the clock. The data paths are internally pipelined and 2n-bits prefetched to achieve very high bandwidth. All input and output voltage levels are compatible with LVCMOS.
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