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IS46LR16160G - 4M x 16Bits x 4Banks Mobile DDR SDRAM

Description

The IS43/46LR16160G is 268,435,456 bits CMOS Mobile Double Data Rate Synchronous DRAM organized as 4 banks of 4,194,304 words x 16 bits.

This product uses a double-data-rate architecture to achieve high-speed operation.

The Data Input/ Output signals are transmitted on a 16-bit bus.

Features

  • JEDEC standard 1.8V power supply.
  • VDD = 1.8V, VDDQ = 1.8V.
  • Four internal banks for concurrent operation.
  • MRS cycle with address key programs - CAS latency 2, 3 (clock) - Burst length (2, 4, 8, 16) - Burst type (sequential & interleave).
  • Fully differential clock inputs (CK, /CK).
  • All inputs except data & DM are sampled at the rising edge of the system clock.
  • Data I/O transaction on both edges of data strobe.
  • Bidirectional da.

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Other Datasheets by ISSI (now Infineon)

Part Number Description
IS46LR16160F 4M x 16Bits x 4Banks Mobile DDR SDRAM
IS46LR16128B 2Gb Mobile DDR SDRAM
IS46LR16200D 1M x 16Bits x 2Banks Mobile DDR SDRAM
IS46LR16320B 8M x 16Bits x 4Banks Mobile DDR SDRAM
IS46LR16320C 8M x 16Bits x 4Banks Mobile DDR SDRAM

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IS43/46LR16160G 4M x 16Bits x 4Banks Mobile DDR SDRAM Description The IS43/46LR16160G is 268,435,456 bits CMOS Mobile Double Data Rate Synchronous DRAM organized as 4 banks of 4,194,304 words x 16 bits. This product uses a double-data-rate architecture to achieve high-speed operation. The Data Input/ Output signals are transmitted on a 16-bit bus. The double data rate architecture is essentially a 2N prefetch architecture with an interface designed to transfer two data words per clock cycle at the I/O pins. This product offers fully synchronous operations referenced to both rising and falling edges of the clock. The data paths are internally pipelined and 2n-bits prefetched to achieve very high bandwidth. All input and output voltage levels are compatible with LVCMOS.