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IS46LD32640B - 2Gb Mobile LPDDR2 S4 SDRAM

Download the IS46LD32640B datasheet PDF. This datasheet also covers the IS46LD16128B variant, as both devices belong to the same 2gb mobile lpddr2 s4 sdram family and are provided as variant models within a single manufacturer datasheet.

Description

The IS43/46LD16128B/32640B is 2Gbit CMOS LPDDR2 DRAM.

The device is organized as 8 banks of 16Meg words of 16bits or 8Meg words of 32bits.

This product uses a double-data-rate architecture to achieve high-speed operation.

Features

  • Low-voltage Core and I/O Power Supplies VDD2 = 1.14-1.30V, VDDCA/VDDQ = 1.14-1.30V, VDD1 = 1.70-1.95V.
  • High Speed Un-terminated Logic(HSUL_12) I/O Interface.
  • Clock Frequency Range : 10MHz to 533MHz (data rate range : 20Mbps to 1066Mbps per I/O).
  • Four-bit Pre-fetch DDR Architecture.
  • Multiplexed, double data rate, command/address inputs.
  • Eight internal banks for concurrent operation.
  • Bidirectional/differential data strobe per byte of.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IS46LD16128B-ISSI.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
IS43/46LD16128B IS43/46LD32640B 2Gb (x16, x32) Mobile LPDDR2 S4 SDRAM JULY 2021 FEATURES • Low-voltage Core and I/O Power Supplies VDD2 = 1.14-1.30V, VDDCA/VDDQ = 1.14-1.30V, VDD1 = 1.70-1.
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