• Part: IS46LD16160B
  • Description: 256Mb Mobile LPDDR2 S4 SDRAM
  • Manufacturer: ISSI
  • Size: 4.09 MB
IS46LD16160B Datasheet (PDF) Download
ISSI
IS46LD16160B

Overview

JUNE 2022 The IS43/46LD16160B/32800B is 256Mbit CMOS LPDDR2 DRAM. The device is organized as 4 banks of 4Meg words of 16bits or 2Meg words of 32bits.

  • Low-voltage Core and I/O Power Supplies VDD2 = 1.14-1.30V, VDDCA/VDDQ = 1.14-1.30V, VDD1 = 1.70-1.95V
  • High Speed Un-terminated Logic(HSUL_12) I/O Interface
  • Clock Frequency Range : 10MHz to 533MHz (data rate range : 20Mbps to 1066Mbps per I/O)
  • Four-bit Pre-fetch DDR Architecture
  • Multiplexed, double data rate, command/address inputs
  • Four internal banks for concurrent operation
  • Bidirectional/differential data strobe per byte of data (DQS/DQS#)
  • Programmable Read/Write latencies(RL/WL) and burst lengths(4,8 or 16)
  • ZQ Calibration
  • On-chip temperature sensor to control self refresh rate