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IS46DR16640C - DDR2 DRAM

Download the IS46DR16640C datasheet PDF. This datasheet also covers the IS43DR81280C variant, as both devices belong to the same ddr2 dram family and are provided as variant models within a single manufacturer datasheet.

General Description

architecture to achieve high-speed operation.

data words per clock cycle at the I/O balls.

Key Features

  • Vdd = 1.8V ±0.1V, Vddq = 1.8V ±0.1V.
  • JEDEC standard 1.8V I/O (SSTL_18-compatible).
  • Double data rate interface: two data transfers per clock cycle.
  • Differential data strobe (DQS, DQS).
  • 4-bit prefetch architecture.
  • On chip DLL to align DQ and DQS transitions with CK.
  • 8 internal banks for concurrent operation.
  • Programmable CAS latency (CL) 3, 4, 5, 6 and 7 supported.
  • Posted CAS and programmable additive laten.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IS43DR81280C-ISSI.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
IS46R16160F 256Mb DDR SDRAM Integrated Silicon Solution
IS46R16320D 16Mx32 32Mx16 64Mx8 512Mb DDR SDRAM Integrated Silicon Solution
IS46R16320E 512Mb DDR SDRAM Integrated Silicon Solution
IS46R16800E 128Mb DDR SDRAM Integrated Silicon Solution
IS46R32160D 16Mx32 32Mx16 64Mx8 512Mb DDR SDRAM Integrated Silicon Solution

Other Datasheets by ISSI (now Infineon)

Part Number Description
IS46DR16640B 1Gb DDR2 SDRAM
IS46DR16640BL 1Gb DDR2 SDRAM
IS46DR16640D 64Mx16 DDR2 DRAM
IS46DR16640DL 64Mx16 DDR2 DRAM
IS46DR16128C DDR2 DRAM

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
IS43/46DR81280C IS43/46DR16640C 128Mx8, 64Mx16 DDR2 DRAM FEATURES • Vdd = 1.8V ±0.1V, Vddq = 1.8V ±0.1V • JEDEC standard 1.