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IS46DR16160B - DDR2 DRAM

Download the IS46DR16160B datasheet PDF. This datasheet also covers the IS46DR83200B variant, as both devices belong to the same ddr2 dram family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • Vdd = 1.8V ±0.1V, Vddq = 1.8V ±0.1V.
  • JEDEC standard 1.8V I/O (SSTL_18-compatible).
  • Double data rate interface: two data transfers per clock cycle.
  • Differential data strobe (DQS, DQS).
  • 4-bit prefetch architecture.
  • On chip DLL to align DQ and DQS transitions with CK.
  • 4 internal banks for concurrent operation.
  • Programmable CAS latency (CL) 3, 4, 5, 6 and 7 sup- ported.
  • Posted CAS and programmable additive lat.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IS46DR83200B-ISSI.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
IS46R16160F 256Mb DDR SDRAM Integrated Silicon Solution
IS46R16320D 16Mx32 32Mx16 64Mx8 512Mb DDR SDRAM Integrated Silicon Solution
IS46R16320E 512Mb DDR SDRAM Integrated Silicon Solution
IS46R16800E 128Mb DDR SDRAM Integrated Silicon Solution
IS46R32160D 16Mx32 32Mx16 64Mx8 512Mb DDR SDRAM Integrated Silicon Solution

Other Datasheets by ISSI (now Infineon)

Part Number Description
IS46DR16128C DDR2 DRAM
IS46DR16320B 512Mb DDR2 SDRAM
IS46DR16320D DDR2 DRAM
IS46DR16320E DDR2 DRAM
IS46DR16640B 1Gb DDR2 SDRAM

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
IS43/46DR83200B IS43/46DR16160B 32Mx8, 16Mx16 DDR2 DRAM FEATURES • Vdd = 1.8V ±0.1V, Vddq = 1.8V ±0.1V • JEDEC standard 1.