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IS45VM16200D Datasheet 1M x 16Bits x 2Banks Low Power Synchronous DRAM

Manufacturer: ISSI (now Infineon)

Download the IS45VM16200D datasheet PDF. This datasheet also includes the IS42SM16200D variant, as both parts are published together in a single manufacturer document.

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Note: The manufacturer provides a single datasheet file (IS42SM16200D-ISSI.pdf) that lists specifications for multiple related part numbers.

General Description

These IS42SM/RM/VM16200D are low power 33,554,432 bits CMOS Synchronous DRAM organized as 2 banks of 1,048,576 words x 16 bits.

These products are offering fully synchronous operation and are referenced to a positive edge of the clock.

All inputs and outputs are synchronized with the rising edge of the clock input.

Overview

IS42/45SM/RM/VM16200D 1M x 16Bits x 2Banks Low Power Synchronous.

Key Features

  • JEDEC standard 3.3V, 2.5V, 1.8V power supply.
  • Auto refresh and self refresh.
  • All pins are compatible with LVCMOS interface.
  • 4K refresh cycle / 64ms.
  • Programmable Burst Length and Burst Type - 1, 2, 4, 8 or Full Page for Sequential Burst - 4 or 8 for Interleave Burst.
  • Programmable CAS Latency : 2,3 clocks.
  • All inputs and outputs referenced to the positive edge of the system clock.
  • Data mask function by DQM.
  • Internal du.

More Datasheets from ISSI (now Infineon)

Part Number Description
IS45VM16160E 4M x 16Bits x 4Banks Mobile Synchronous DRAM
IS45VM16160M 4M x 16Bits x 4Banks Mobile Synchronous DRAM
IS45VM16800E 128Mb Mobile Synchronous DRAM
IS45VM32100D 512K x 32Bits x 2Banks Low Power Synchronous DRAM
IS45VM32160D 4M x 32Bits x 4Banks Mobile Synchronous DRAM
IS45VM32160E 4M x 32Bits x 4Banks Mobile Synchronous DRAM
IS45VM32200M 512K x 32Bits x 4Banks Mobile Synchronous DRAM
IS45VM32400E 128Mb Mobile Synchronous DRAM
IS45VM32400G 1M x 32Bits x 4Banks Mobile Synchronous DRAM
IS45VM32400H 1M x 32Bits x 4Banks Mobile Synchronous DRAM