Datasheet4U Logo Datasheet4U.com

IS45SM16200D - 1M x 16Bits x 2Banks Low Power Synchronous DRAM

Download the IS45SM16200D datasheet PDF. This datasheet also covers the IS42SM16200D variant, as both devices belong to the same 1m x 16bits x 2banks low power synchronous dram family and are provided as variant models within a single manufacturer datasheet.

Description

These IS42SM/RM/VM16200D are low power 33,554,432 bits CMOS Synchronous DRAM organized as 2 banks of 1,048,576 words x 16 bits.

These products are offering fully synchronous operation and are referenced to a positive edge of the clock.

Features

  • JEDEC standard 3.3V, 2.5V, 1.8V power supply.
  • Auto refresh and self refresh.
  • All pins are compatible with LVCMOS interface.
  • 4K refresh cycle / 64ms.
  • Programmable Burst Length and Burst Type - 1, 2, 4, 8 or Full Page for Sequential Burst - 4 or 8 for Interleave Burst.
  • Programmable CAS Latency : 2,3 clocks.
  • All inputs and outputs referenced to the positive edge of the system clock.
  • Data mask function by DQM.
  • Internal du.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IS42SM16200D-ISSI.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
IS45S16100C1 512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM Integrated Silicon Solution
IS45S16100E 512K Words x 16 Bits x 2 Banks 16Mb SYNCHRONOUS DYNAMIC RAM Integrated Silicon Solution
IS45S16160C 256 Mb Single Data Rate Synchronous DRAM Integrated Silicon Solution
IS45S16160D 256-MBIT SYNCHRONOUS DRAM Integrated Silicon Solution
IS45S16320B 32M x 16 512Mb SYNCHRONOUS DRAM Integrated Silicon Solution

Other Datasheets by ISSI (now Infineon)

Part Number Description
IS45SM16160E 4M x 16Bits x 4Banks Mobile Synchronous DRAM
IS45SM32100D 512K x 32Bits x 2Banks Low Power Synchronous DRAM
IS45SM32160E 4M x 32Bits x 4Banks Mobile Synchronous DRAM
IS45SM32200M 512K x 32Bits x 4Banks Mobile Synchronous DRAM
IS45SM32400G 1M x 32Bits x 4Banks Mobile Synchronous DRAM

Full PDF Text Transcription

Click to expand full text
IS42/45SM/RM/VM16200D 1M x 16Bits x 2Banks Low Power Synchronous DRAM Description These IS42SM/RM/VM16200D are low power 33,554,432 bits CMOS Synchronous DRAM organized as 2 banks of 1,048,576 words x 16 bits. These products are offering fully synchronous operation and are referenced to a positive edge of the clock. All inputs and outputs are synchronized with the rising edge of the clock input. The data paths are internally pipelined to achieve high bandwidth. All input and output voltage levels are compatible with LVCMOS. Features  JEDEC standard 3.3V, 2.5V, 1.
Published: |