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IS43LR32800H Datasheet

Manufacturer: ISSI (now Infineon)

This datasheet includes multiple variants, all published together in a single manufacturer document.

IS43LR32800H datasheet preview

Datasheet Details

Part number IS43LR32800H
Datasheet IS43LR32800H IS46LR32800H Datasheet (PDF)
File Size 1.80 MB
Manufacturer ISSI (now Infineon)
Description 2M x 32Bits x 4Banks Mobile DDR SDRAM
IS43LR32800H page 2 IS43LR32800H page 3

IS43LR32800H Overview

This product uses a double-data-rate architecture to achieve high-speed operation. The Data Input/ Output signals are transmitted on a 32-bit bus. The double data rate architecture is essentially a 2N prefetch architecture with an interface designed to transfer two data words per clock cycle at the I/O pins.

IS43LR32800H Key Features

  • JEDEC standard 1.8V power supply
  • VDD = 1.8V, VDDQ = 1.8V
  • Four internal banks for concurrent operation
  • MRS cycle with address key programs
  • CAS latency 2, 3 (clock)
  • Burst length (2, 4, 8, 16)
  • Burst type (sequential & interleave)
  • Fully differential clock inputs (CK, /CK)
  • All inputs except data & DM are sampled at the rising edge of the system clock
  • Data I/O transaction on both edges of data strobe
ISSI (now Infineon) logo - Manufacturer

More Datasheets from ISSI (now Infineon)

See all ISSI (now Infineon) datasheets

Part Number Description
IS43LR32800F 2M x 32Bits x 4Banks Mobile DDR SDRAM
IS43LR32800G 2M x 32Bits x 4Banks Mobile DDR SDRAM
IS43LR32100C 512K x 32Bits x 2Banks Mobile DDR SDRAM
IS43LR32100D 512K x 32Bits x 2Banks Mobile DDR SDRAM
IS43LR32160B 4M x 32Bits x 4Banks Mobile DDR SDRAM
IS43LR32160C 4M x 32Bits x 4Banks Mobile DDR SDRAM
IS43LR32200B 512K x 32Bits x 4Banks Mobile DDR SDRAM
IS43LR32200C 512K x 32Bits x 4Banks Mobile DDR SDRAM
IS43LR32320B 8M x 32Bits x 4Banks Mobile DDR SDRAM
IS43LR32320C 1Gb Mobile DDR SDRAM

IS43LR32800H Distributor

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