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IS42R83200D - 256-MBIT SYNCHRONOUS DRAM

General Description

A0-A12 Row Address Input A0-A9 Column Address Input BA0, BA1 Bank Select Address DQ0 to DQ7 Data I/O CLK System Clock Input CKE Clock Enable CS Chip Select RAS Row Address Strobe Command CAS Column Address Strobe Command WE DQM Vdd Vss Vddq Vssq NC Wri

Key Features

  • Clock frequency: 133, 100 MHz.
  • Fully synchronous; all signals referenced to a positive clock edge.
  • Internal bank for hiding row access/precharge.
  • Single Power supply: 2.5V + 0.2V.
  • LVTTL interface.
  • Programmable burst length.
  • (1, 2, 4, 8, full page).
  • Programmable burst sequence: Sequential/Interleave.
  • Auto Refresh (CBR).
  • Self Refresh.
  • 8K refresh cycles every 16 ms (A2 grade) or 64 ms (com.

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Other Datasheets by ISSI (now Infineon)

Part Number Description
IS42R86400D 512Mb SDRAM
IS42R86400F 512Mb SDRAM
IS42R16160D 256-MBIT SYNCHRONOUS DRAM
IS42R16320D 512Mb SDRAM
IS42R16320F 512Mb SDRAM

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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IS42R83200D, IS42R16160D IS45R83200D, IS45R16160D 32Meg x 8, 16Meg x16 256-MBIT SYNCHRONOUS DRAM MARCH 2010 FEATURES • Clock frequency: 133, 100 MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access/precharge • Single Power supply: 2.5V + 0.