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IS39LV512 - 3.0 Volt-only CMOS Flash Memory

Key Features

  • Single Power Supply Operation - Low voltage range: 2.70 V - 3.60 V.
  • Memory Organization - IS39LV040: 512K x 8 (4 Mbit) - IS39LV010: 128K x 8 (1 Mbit) - IS39LV512: 64K x 8 (512 Kbit).
  • High Performance Read - 70 ns access time.
  • Cost Effective Sector/Block Architecture - Uniform 4 Kbyte sectors - Uniform 64 Kbyte blocks (sector group - except IS39LV512).
  • Data# Polling and Toggle Bit Features.
  • Hardware Data Protection.
  • Automatic Erase.

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Part Number Description
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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IS39LV040 / IS39LV010 / IS39LV512 4Mbit / 1Mbit / 512 Kbit 3.0 Volt-only CMOS Flash Memory FEATURES • Single Power Supply Operation - Low voltage range: 2.70 V - 3.60 V • Memory Organization - IS39LV040: 512K x 8 (4 Mbit) - IS39LV010: 128K x 8 (1 Mbit) - IS39LV512: 64K x 8 (512 Kbit) • High Performance Read - 70 ns access time • Cost Effective Sector/Block Architecture - Uniform 4 Kbyte sectors - Uniform 64 Kbyte blocks (sector group - except IS39LV512) • Data# Polling and Toggle Bit Features • Hardware Data Protection • Automatic Erase and Byte Program - Build-in automatic program verification - Typical 16 µs/byte programming time - Typical 55 ms sector/block/chip erase time • Low Power Consumption - Typical 4 mA active read current - Typical 8 mA program/erase current - Typical 0.