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IS39LV010 - 3.0 Volt-only CMOS Flash Memory

Download the IS39LV010 datasheet PDF. This datasheet also covers the IS39LV512 variant, as both devices belong to the same 3.0 volt-only cmos flash memory family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • Single Power Supply Operation - Low voltage range: 2.70 V - 3.60 V.
  • Memory Organization - IS39LV040: 512K x 8 (4 Mbit) - IS39LV010: 128K x 8 (1 Mbit) - IS39LV512: 64K x 8 (512 Kbit).
  • High Performance Read - 70 ns access time.
  • Cost Effective Sector/Block Architecture - Uniform 4 Kbyte sectors - Uniform 64 Kbyte blocks (sector group - except IS39LV512).
  • Data# Polling and Toggle Bit Features.
  • Hardware Data Protection.
  • Automatic Erase.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IS39LV512-ISSI.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by ISSI (now Infineon)

Part Number Description
IS39LV040 3.0 Volt-only CMOS Flash Memory
IS39LV512 3.0 Volt-only CMOS Flash Memory
IS31AP2005 2.95W MONO FILTER-LESS CLASS-D AUDIO POWER AMPLIFIER
IS31AP2006 3W MONO FILTER-LESS CLASS-D AUDIO POWER AMPLIFIER
IS31AP2010B MONO FILTER-LESS CLASS-D AUDIO POWER AMPLIFIER

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
IS39LV040 / IS39LV010 / IS39LV512 4Mbit / 1Mbit / 512 Kbit 3.0 Volt-only CMOS Flash Memory FEATURES • Single Power Supply Operation - Low voltage range: 2.70 V - 3.60 V • Memory Organization - IS39LV040: 512K x 8 (4 Mbit) - IS39LV010: 128K x 8 (1 Mbit) - IS39LV512: 64K x 8 (512 Kbit) • High Performance Read - 70 ns access time • Cost Effective Sector/Block Architecture - Uniform 4 Kbyte sectors - Uniform 64 Kbyte blocks (sector group - except IS39LV512) • Data# Polling and Toggle Bit Features • Hardware Data Protection • Automatic Erase and Byte Program - Build-in automatic program verification - Typical 16 µs/byte programming time - Typical 55 ms sector/block/chip erase time • Low Power Consumption - Typical 4 mA active read current - Typical 8 mA program/erase current - Typical 0.