IS34MW04G168
Description
The device has 4352-byte static registers which allow program and read data to be transferred between the register and the memory cell array in 4352-byte increments. The Erase operation is implemented in a single block unit (256Kbytes + 16Kbytes).
Key Features
- Flexible & Efficient Memory Architecture - Memory Cell: 1bit/Memory Cell - Organization: 512Mb x8, 256Mb x16 - Page Size for x8: (4K + 256) Bytes - Page Size for x16: (2K + 128) words - Block Size for x8: 64x (4K + 256) Bytes - Block Size for x16: 64x (2K + 128) words - Number of Plane = 1 - Number of Block per Die (LUN) = 2048
- ONFI 1.0 compliant
- Highest performance - Read Performance: - Random Read: 25us (Max.) - Serial Access: 25ns (Max.) - Write Performance: - Program time: 300us (typ.), 700us (max.) - Block Erase time: 3.5ms (typ.), 10ms (max.)
- Voltage and Temp. Ranges - Single 1.8V (1.7V to 1.95V) Voltage Supply - Temp Grades: - Industrial: -40°C to +85°C
- Efficient Read and Program modes - Command/Address/Data Multiplexed I/O Interface - Command Register Operation - Automatic Page 0 Read at Power-Up Option - Boot from NAND support - Automatic Memory Download - NOP: 4 cycles - Cache Program Operation for High Performance Program - Cache Read Operation - Copy-Back Operation - OTP operation - EDO mode - Block Protection - Page copy
- Advanced Security Protection - Hardware Data Protection: Program/Erase Lockout during Power Transitions
- Industry Standard Pin-out & Packages - T =48-pin TSOP (Type I) - B =63-ball VFBGA
- Reliable CMOS Floating Gate Technology - ECC Requirement: 8bit/512Byte - Endurance: 60K Program/Erase cycles - Data Retention: 10 years Integrated Silicon Solution, Inc.- 2 Rev. A
