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IS34ML04G088 Datasheet 4Gb SLC-8b ECC

Manufacturer: ISSI (now Infineon)

General Description

The device has 4352-byte static registers which allow program and read data to be transferred between the register and the memory cell array in 4352-byte increments.

The Erase operation is implemented in a single block unit (256Kbytes + 16Kbytes).

Data in the page mode can be read out at 25ns cycle tim

Overview

IS34ML04G088/168 IS35ML04G088/168 4Gb SLC-8b ECC 3.3V X8/X16 NAND FLASH MEMORY STANDARD NAND INTERFACE IS34/35ML04G088/168 4Gb (x8/x16) 3.

Key Features

  • Flexible & Efficient Memory Architecture - Memory Cell: 1bit/Memory Cell - Organization: 512Mb x8, 256Mb x16 - Page Size for x8: (4K + 256) Bytes - Page Size for x16: (2K + 128) words - Block Size for x8: 64x (4K + 256) Bytes - Block Size for x16: 64x (2K + 128) words - Number of Plane = 1 - Number of Block per Die (LUN) = 2048.
  • Highest performance - Read Performance: - Random Read: 25us (Max. ) - Serial Access: 25ns (Max. ) - Write Performance: - Program time: 300us (typ. ), 700.